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1165892 の電気的特性と機能

1165892のメーカーはMulticompです、この部品の機能は「High power NPN silicon power transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 1165892
部品説明 High power NPN silicon power transistors
メーカ Multicomp
ロゴ Multicomp ロゴ 




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1165892 Datasheet, 1165892 PDF,ピン配置, 機能
1165892
High power NPN silicon power transistors.
These devices are designed for linear amplifiers, series pass regulators, and inductive
switching applications.
Features:
Forward biased second breakdown current capability
IS/b = 2.5 A dc at VCE = 60V dc.
Pb-free packages.
(TO-3)
Style 1:
Pin 1. Base
2. Emitter
Collector (Case)
Dimensions Minimum
Maximum
A 1.550 (39.37) Reference
B - 1.050 (26.67)
C 0.250 (6.35) 0.335 (8.51)
D 0.038 (0.97) 0.043 (1.09)
E 0.055 (1.40) 0.070 (1.77)
G 0.430 (10.92) BSC
H 0.215 (5.46) BSC
K 0.440 (11.18) 0.480 (12.19)
L 0.665 (16.89) BSC
N - 0.830 (21.08)
Q 0.151 (3.84) 0.165 (4.19)
U 1.187 (30.15) BSC
V 0.131 (3.33) 0.188 (4.77)
Dimensions : Inches (Millimetres)
20 and 30 Ampere
Power Transistors
NPN Silicon
40 and 60 Volts, 150 Watts
(TO-3)
Case 1-07
Style 1
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
Page <1>
22/10/08 V1.1

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1165892 pdf, ピン配列
1165892
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Collector Cut off Current (Note 2)
(VCB = 100V dc, IE = 0)
Emitter Cut off Current (Note 2)
(VBE = 7.0Vdc, IC = 0 )
On Characteristics (Note 2)
DC Current Gain (Note 3)
(lC = 10A dc, VCE = 4.0V dc)
(lC = 20A dc, VCE = 4.0V dc)
Collector-Emitter Saturation Voltage
(lC = 10A dc, IB = 1.0A dc)
(lC = 20A dc, IB = 4.0A dc)
Base-Emitter on Voltage
(lC = 10A dc, VCE = 4.0V dc)
(lC = 8.0A dc, VCE = 4.0V dc)
Dynamic Characteristics (Note 2)
Current-Gain - Bandwidth Product
(lC = 1.0A dc, VCE = 4.0V dc, ftest = 50kHz)
Small-Signal Current Gain
(lC = 1.0A dc, VCE = 4.0V dc, f = 1.0kHz)
Second Breakdown
2N3772
2N3772
Symbol Minimum Maximum
ICBO
IEBO
-
-
5.0
5.0
2N3772
2N3772
2N3772
2N3772
2N3772
hFE
VCE (sat)
VBE (on)
15
5.0
-
-
60
-
1.4
4.0
2.2
fT 0.2
hfe 40
-
-
Second Breakdown Energy with Base Forward Biased, t = 1.0s (non-repetitive)
(VCE = 60V dc)
2N3772
IS/b
2.5
-
2. Indicates JEDEC registered data.
3. Pulse Test: 300µs, Rep. Rate 60cps.
Power Derating
Unit
mA dc
-
V dc
MHz
-
A dc
TC, Case Temperature (°C)
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
Page <3>
22/10/08 V1.1


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部品番号部品説明メーカ
1165892

High power NPN silicon power transistors

Multicomp
Multicomp
1165899

High power NPN silicon transistors

Multicomp
Multicomp


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