(PDF) CJ3139KDW Datasheet

Número de pieza	CJ3139KDW
Descripción	MOSFETS
Fabricantes	JCST
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3139KDW Dual P-Channel Power MOSFET GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSFET (independently) in a package. SOT-363 FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers BDTICMARKING:39K Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2) Thermal Resistance from Junction to Ambient Storage Temperature Junction Temperature Symbol VDSS VGS ID(DC) IDM(pulse) PD RθJA Tj Tstg Value -20 ±12 -0.66 -2.64 150 833 150 -55 ~+150 Units V A mW ℃/W ℃ www.BDTIC.com/jcst 1 page

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PDF CJ3139KDW Data sheet ( Hoja de datos )