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Datasheet 1N6510 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N6510 | Isolated Diode Array SCOTTSDALE DIVISION
1N6510
Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options
WWW.Microsemi .COM
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as steerin | Microsemi | diode |
2 | 1N6510 | Isolated Diode Array SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 4207, REV. -
Isolated Diode Array
Applications:
High Frequency Data Lines RS-323 & RS-432 Networks LAN, Ethernet, I/O Ports IEC61000-4 compatible for ESD / EFT / Surge
Features:
Protects up to 8 I/O Ports Isolated diodes e | SENSITRON SEMICONDUCTOR | diode |
3 | 1N6510 | Diode, Rectifier | American Microsemiconductor | diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f Formosa MS diode | |
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