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Datasheet F153 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | F153 | Diode, Rectifier |  American Microsemiconductor | diode |
| 2 | F1533A | Surface Mount Voltage Controlled Crystal Oscillators
F1533A Series
3.3V FR-4 Based Surface Mount Voltage Controlled Crystal Oscillators Applications: Clock Recovery; PLL; Optic Transmission Equipment; Digital Cross Connect Equipment FR-4 Based SMT -10ºC to 70ºC Operating Temperature "M" Models Operate From - |  Champion | oscillator |
| 3 | F1535 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly |  Polyfet RF Devices | transistor |
| 4 | F1535A | Surface Mount Voltage Controlled Crystal Oscillators
F1535A Series
5V FR-4 Based Surface Mount Voltage Controlled Crystal Oscillators Applications: Clock Recovery; PLL; Optic Transmission Equipment; Digital Cross Connect Equipment FR-4 Based SMT -10ºC to 70ºC Operating Temperature "M" Models Operate From -40 | Champion | oscillator |
F15 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | F15 | Diode Switching 1.5KV 0.35A 2-Pin Case G-66 New Jersey Semiconductor diode | | |
| 2 | F1500NC250 | Extra Fast Recovery Diode
WESTCODE
An IXYS Company
Date:- 2 Oct, 2003 Data Sheet Issue:- 1
Provisional Data
Extra Fast Recovery Diode Type F1500NC250
Absolute Maximum Ratings
VRRM VRSM
VOLTAGE RATINGS
Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1)
MAXIMUM LIMITS
25  IXYS diode | | |
| 3 | F1510 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
| 4 | F1516 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
| 5 | F152 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | F1520 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
| 7 | F153 | Diode, Rectifier American Microsemiconductor diode | |
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