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PDF 2N3906 Data sheet ( 特性 )

部品番号 2N3906
部品説明 PNP General Purpose Transistor
メーカ SeCoS
ロゴ SeCoS ロゴ 

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2N3906 Datasheet, 2N3906 PDF,ピン配置, 機能
Elektronische Bauelemente
2N3906
-0.2A , -40V
PNP General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Power Dissipation PCM: 625mW (Ta=25°C)
Collector Current ICM: -200mA
Collector – Base Voltage V(BR)CBO: -40V
TO-92
AD
B
CLASSIFICATION OF hFE
Product-Rank
2N3906-O
Range
100~200
2N3906-Y
200~300
E CF
Collector


Base

Emitter
GH
Emitter
Base
J Collector
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
-40
-40
-5
-0.2
625
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Min.
-40
-40
-5
-
-
100
60
-
-
250
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-50
-0.1
300
-
-0.4
-0.95
-
Unit
V
V
V
μA
nA
μA
V
V
MHz
Test Conditions
IC= -10μA, IE=0
IC= -1mA, IB=0
IE= -100μA, IC=0
VCB= -40V, IE=0
VCE= -30V, VBE(off)= -3V
VEB = -5V, IC=0
VCE= -1V, IC= -10mA
VCE= -1V, IC= -50mA
IC= -50mA, IB= -5mA
IC= -50mA, IB= -5mA
VCE= -20V, IC= -10mA, f=100MHz
http://www.SeCoSGmbH.com/
11-Jan-2012 Rev.C
Any changes of specification will not be informed individually.
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