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W TE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Epoxy: UL 94V-O rate flame retardant
1N5400 – 1N5408
3.0A SILICON RECTIFIER
AB
A
D
DO-201AD
Dim Min Max
A 25.4 —
B 8.50 9.50
C 1.20 1.30
D 5.0 5.60
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
RMS Reverse Voltage
VR(RMS)
Average Rectified Output Current
(Note 1)
@TA = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IO
IFSM
Forward Voltage
@IF = 3.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
Typical Junction Capacitance (Note 2)
VFM
IRM
Cj
Typical Thermal Resistance Junction to Ambient
(Note 1)
RJA
Operating Temperature Range
Tj
Storage Temperature Range
TSTG
1N
5400
50
35
1N
5401
100
70
1N 1N 1N
5402 5404 5406
200 400 600
140 280 420
3.0
200
1.0
5.0
100
50
18
-65 to +125
-65 to +150
1N
5407
800
560
1N
5408
1000
700
Unit
V
V
A
A
V
µA
pF
K/W
°C
°C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N5400 – 1N5408
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© 2002 Won-Top Electronics