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Datasheet 1N5407 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5407 | Silicon Rectifiers CREAT BY ART
3A, 50V - 1000V Silicon Rectifiers
1N5400 - 1N5408
Taiwan Semiconductor
FEATURES
- High efficiency, Low VF - High current capability - High reliability - High surge current capability - Low power loss
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halo |  Taiwan Semiconductor | rectifier |
| 2 | 1N5407 | GENERAL PURPOSE RECTIFIERS 1N5400-1N5408
High-reliability discrete products and engineering services since 1977
GENERAL PURPOSE RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standa |  Digitron Semiconductors | rectifier |
| 3 | 1N5407 | 3.0 Ampere General Purpose Rectifiers 1N5400-1N5408
Discrete POWER & Signal Technologies
1N5400 - 1N5408
Features • • •
3.0 ampere operation at TA = 75°C with no thermal runaway. High current capability. Low leakage.
1.0 min (25.4)
Dimensions in inches (mm)
DO-201AD
COLOR BAND DENOTES CATHODE
0.375 (9.53) 0.285 (7.24)
0.210 |  Fairchild Semiconductor | rectifier |
| 4 | 1N5407 | STANDARD RECOVERY RECTIFIERS 50-1000 VOLTS 3.0 AMPERE MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 1N5400/D
Axial-Lead Standard Recovery Rectifiers
Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features: • • • • • High Curre |  Motorola Inc | rectifier |
| 5 | 1N5407 | 3 AMP PLASTIC SILICON RECTIFIER |  Fuji Electric | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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