|
|
Datasheet 1N5403G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5403G | GLASS PASSIVATED SILICON RECTIFIER 1N5400G THRU 1N5408G
GLASS PASSIVATED SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
DO-201AD
0.220 (5.6) 0.197(5.0)
DIA.
1.0 (25.4) MIN.
0.375(9.5) 0.285(7.2)
FEATURES
The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Const |  Shunye | rectifier |
| 2 | 1N5403G | 3.0A GLASS PASSIVATED RECTIFIER 1N5400G - 1N5408G
3.0A GLASS PASSIVATED RECTIFIER Features
· · · · · Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Plastic Material has UL Flammability Classification 94V-0
A
B
A
D
C
Mechanical Da |  Diodes Incorporated | rectifier |
| 3 | 1N5403G | 3A GENERAL PURPOSE GPP DIODES |  Leshan Radio Company | diode |
| 4 | 1N5403G | General Purpose Plastic Rectifier www.DataSheet.co.kr
SIYU R
普通塑封整流二极管
反向电压 50 --- 1000 V 正向电流 3.0 A
DO-27
1N5400G ...... 1N5408G
General Purpose Plastic Rectifier
Reverse Voltage 50 to 1000 V Forward Current 3.0 A 特征 Features
·玻璃钝化芯片 Glass Passivated chip ·反向漏电流低 Low |  SIYU | rectifier |
| 5 | 1N5403G | 3.0A Leaded Type Glass Purpose Rectifiers Slilcon Rectifier
3.0A Leaded Type Glass Purpose Rectifiers - 50V-1000V
Features
• Axial lead type devices for through hole design. • High current capability. • High surge capability. • Glass passivated chip junction inside. • Lead-free parts meet environmental standards of
MIL-STD-19500 / |  American First Semiconductor | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
| Esta página es del resultado de búsqueda del 1N5403G. Si pulsa el resultado de búsqueda de 1N5403G se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |