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Datasheet 1N5400G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5400G | GLASS PASSIVATED SILICON RECTIFIER 1N5400G THRU 1N5408G
GLASS PASSIVATED SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
DO-201AD
0.220 (5.6) 0.197(5.0)
DIA.
1.0 (25.4) MIN.
0.375(9.5) 0.285(7.2)
FEATURES
The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Const |  Shunye | rectifier |
| 2 | 1N5400G | Glass Passivated Rectifiers CREAT BY ART
Glass Passivated Rectifiers
FEATURES
- Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free accor |  Taiwan Semiconductor | rectifier |
| 3 | 1N5400G | GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N5400G THRU 1N5408G
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
FEATURES
* * * * * High reliability Low leakage Low forward voltage drop High current capability Glass passivated junction
DO-201AD
ME |  Rectron Semiconductor | rectifier |
| 4 | 1N5400G | 3.0 AMPS.GLASS PASSIVATED RECTIFIERS |  Jinan Gude Electronic Device | rectifier |
| 5 | 1N5400G | GLASS PASSIVATED JUNCTION RECTIFIER SHANGHAI SUNRISE ELECTRONICS CO., LTD. 1N5400G THRU 1N5408G
GLASS PASSIVATED JUNCTION RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 3.0A
FEATURES
• Molded case feature for auto insertion • Glass passivated chip • High current capability • Low leakage current • High surge capability • High temp |  Shanghai Sunrise Electronics | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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