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IRLML5203GPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRLML5203GPbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLML5203GPbFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3TM,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
PD - 96166
IRLML5203GPbF
VDSS
-30V
HEXFET® Power MOSFET
RDS(on) max (mW)
98@VGS = -10V
165@VGS = -4.5V
ID
-3.0A
-2.6A
*
'
6
Micro3TM
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-3.0
-2.4
-24
1.25
0.80
10
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
1
07/22/08
1 Page 100
10
VGS
TOP -15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
1
-2.70V
0.1
0.01
0.1
20µs PULSE WIDTH
TJ= 25 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRLML5203GPbF
100
10
VGS
TOP -15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
1
-2.70V
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10
TJ = 150° C
1
0.1
2.0
TJ = 25° C
V DS= -15V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0
-VGS , Gate-to-Source Voltage (V)
7.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 3.0A
1.5
1.0
0.5
0.0 VGS = -10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRLML5203GPbF
0.14
0.13
0.12
0.11
0.10
0.09 ID = -3.0A
0.08
0.07
4.0
6.0 8.0 10.0 12.0 14.0
-VGS, Gate -to -Source Voltage (V)
16.0
Fig 11. Typical On-Resistance Vs. Gate
Voltage
0.40
0.30
0.20 VGS = -4.5V
0.10
VGS = -10V
0.00
0
4 8 12
-ID , Drain Current (A)
16
Fig 12. Typical On-Resistance Vs. Drain
Current
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ IRLML5203GPbF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRLML5203GPbF | Power MOSFET ( Transistor ) | International Rectifier |