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Datasheet 1N5396 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5396 | 1.5 Ampere General Purpose Rectifiers 1N5391-1N5399
1N5391 - 1N5399
Features • • •
1.5 ampere operation at TA = 70°C with no thermal runaway. High current capability. Low leakage.
DO-15
COLOR BAND DENOTES CATHODE
General Purpose Rectifiers
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM
TA = 25°C unless otherwise noted
Par |  Fairchild Semiconductor | rectifier |
| 2 | 1N5396 | GENERAL PURPOSE PLASTIC RECTIFIER 1N5391 THRU 1N5399
GENERAL PURPOSE PLASTIC RECTIFIER
Reverse Voltage - 50 to 1000 Volts
DO-204AL
Forward Current - 1.5 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ 1.5 Ampere operation at TL=70°C with no th |  General Semiconductor | rectifier |
| 3 | 1N5396 | 1.5 AMP PLASTIC SILICON RECTIFIER |  Fuji Electric | rectifier |
| 4 | 1N5396 | 1.5 Amp Rectifier 50 - 1000 Volts MCC
Features
• • • • Low Current Leakage Low Forward Voltage High Current Capability Low Cost
omponents 21201 Itasca Street Chatsworth !"# $
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1N5391 THRU 1N5399
1.5 Amp Rectifier 50 - 1000 Volts
• • •
Maximum Rating |  Micro Commercial Components | rectifier |
| 5 | 1N5396 | 1.5A GENERAL DIODES |  Leshan Radio Company | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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