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PDF CP792V-2N3906 Data sheet ( Hoja de datos )
| Número de pieza | CP792V-2N3906 | |
| Descripción | PNP - General Purpose Transistor Die | |
| Fabricantes | Central Semiconductor | |
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CP792V-2N3906
PNP - General Purpose Transistor Die
0.2 Amp, 40 Volt
The CP792V-2N3906 is a silicon PNP transistor designed for general purpose applications.
B
E
BACKSIDE COLLECTOR
MECHANICAL SPECIFICATIONS:
Die Size
11 x 11 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Size
3.74 x 3.74 MILS
Emitter Bonding Pad Size 3.74 x 3.74 MILS
Top Side Metalization
Al – 30,000Å
Back Side Metalization
Au – 18,000Å
Scribe Alley Width
1.5 MILS
Wafer Diameter
4 INCHES
R0 Gross Die Per Wafer
93,826
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICEV
VCE=30V, VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=1.0mA
BVEBO
IE=10μA
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=50mA, IB=5.0mA
hFE VCE=1.0V, IC=0.1mA
hFE VCE=1.0V, IC=1.0mA
hFE VCE=1.0V, IC=10mA
hFE VCE=1.0V, IC=50mA
hFE VCE=1.0V, IC=100mA
hfe VCE=10V, IC=1.0mA, f=1.0kHz
fT VCE=20V, IC=10mA, f=100MHz
Cob VCB=5.0V, IE=0, f=100kHz
Cib VBE=0.5V, IC=0, f=100kHz
SYMBOL
VCBO
VCEO
VEBO
IC
TJ, Tstg
MIN
40
40
5.0
0.65
60
80
100
60
30
100
250
40
40
5.0
200
-65 to +150
MAX
50
0.25
0.40
0.85
0.95
UNITS
V
V
V
mA
°C
UNITS
nA
V
V
V
V
V
V
V
300
400
MHz
4.5 pF
10 pF
R0 (25-August 2016)
1 page  
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CONTACT US
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Main Tel: (631) 435-1110
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| PDF Descargar | [ Datasheet CP792V-2N3906.PDF ] | |
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