|
|
Datasheet 1N5391G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5391G | TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER DC COMPONENTS CO., LTD.
R
7O;9?7I TJRU 7O;9??I
RGETKHKGR SQGEKCMKSTS
TGEJOKECM SQGEKHKECTKPOS PH IMCSS QCSSKVCTGF RGETKHKGR
VPMTCIG RCOIG 3 ;6 lh 7666 Vhelk EURRGOT 3 74; Cfi_j_k
HGCTURGS
0 0 0 0 Mho ]hkl Mho e_[d[a_ Mho `hjo[j^ nhel[a_ ^jhi Jcab ]mjj_gl ][i[\ceclq
FP37;
NGEJCOKECM FCTC
0 0 0 |  Dc Components | rectifier |
| 2 | 1N5391G | 1.5A GLASS PASSIVATED RECTIFIER 1N5391G - 1N5399G
1.5A GLASS PASSIVATED RECTIFIER Features
· · · · · · Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material - UL Flammability Classification 94V-0
|  Diodes Incorporated | rectifier |
| 3 | 1N5391G | GLASS PASSIVATED JUNCTION SILICON RECTIFIERS 1N5391G - 1N5399G
PRV : 50 - 1000 Volts Io : 1.5 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41
0.107 (2.7) 0.080 (2.0)
1.00 (25.4) MIN.
0.205 (5.2) 0.16 |  EIC discrete Semiconductors | rectifier |
| 4 | 1N5391G | GLASS PASSIVATED JUNCTION RECTIFIER 1N5391G THRU 1N5399G
GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High temperature metallurgically bonded construction Glass passivated cavity-free junction |  GOOD-ARK Electronics | rectifier |
| 5 | 1N5391G | 1.5A GENERAL PURPOSE GPP DIODES |  Leshan Radio Company | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
| Esta página es del resultado de búsqueda del 1N5391G. Si pulsa el resultado de búsqueda de 1N5391G se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |