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Datasheet 1N5391 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5391 | PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes) 1N5391 THRU 1N5399
PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes
FEATURES l l l l Low cost High current capability High reliability Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing l l l Flame Retardant Epoxy Molding Compound 1.5 am |  Pan Jit International Inc. | rectifier |
| 2 | 1N5391 | PLASTIC SILICON RECTIFIER 1N5391 THRU 1N5399
PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes
FEATURES l l l l Low cost High current capability High reliability Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound l l l 1.5 am |  TRSYS | rectifier |
| 3 | 1N5391 | SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.5 Amperes) 1N5391 - 1N5399
VOLTAGE RANGE - 50 to 1000 Volts
MECHANICAL DATA
* * * * * * Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: MIL-STD-202E, Method 208 guaranteed Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.38 gram
CURRENT - 1.5 Amperes
SILICON RECTIFIE |  Wing Shing Computer Components | rectifier |
| 4 | 1N5391 | 1.5A SILICON RECTIFIER |  Won-Top Electronics | rectifier |
| 5 | 1N5391 | SILICON RECTIFIER |  Zowie Technology Corporation | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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