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Datasheet 1N5386 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
11N53865 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 Watt Surmetic 40 Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this is in an axial-lead, transfer
Motorola  Inc
Motorola Inc
diode
21N5386SILICON 5 WATT ZENER DIODES

Microsemi Corporation
Microsemi Corporation
diode
31N53865W ZENER DIODE

1N5344B - 1N5388B 5W ZENER DIODE Features · · · · · · Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Voltage Tolerance on Nominal VZ is Standard 100% Tested A B A D C Mechanical Data · · · · Case: Molded Plastic Over Glass Passivated Ju
Diodes Incorporated
Diodes Incorporated
diode
41N53865 Watt Surmetic 40 Silicon Zener Diodes

Boca Semiconductor Corporation
Boca Semiconductor Corporation
diode
51N5386GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts)

Approve Sheet Part Number: 1N5348B~1N5388B DATA SHEET 1N5348B~1N5388B GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE- 11 to 200 Volts Power - 5.0 Watts FEATURES • Built-in strain relief • Glass passivated junction • Low inductance • Typical IR less than 5.0µA above 11V • Plastic p
Pan Jit International Inc.
Pan Jit International Inc.
diode


1N5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
11N50Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
21N50GOLD BONDED GERMANIUM DIODES

New Jersey Semiconductor
New Jersey Semiconductor
diode
31N50N-CHANNEL POWER MOSFET

1N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re
Unisonic Technologies
Unisonic Technologies
mosfet
41N50-KWN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 1N50-KW Preliminary 1A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara
Unisonic Technologies
Unisonic Technologies
mosfet
51N500Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
61N5000Silicon Rectifiers

Microsemi Corporation
Microsemi Corporation
rectifier
71N5000Diode Switching 400V 3A 2-Pin TOP HAT

New Jersey Semiconductor
New Jersey Semiconductor
diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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