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PN10HN60-CAI-T1のメーカーはChipownです、この部品の機能は「N-Channel Superjunction MOSFET」です。 |
部品番号 | PN10HN60-CAI-T1 |
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部品説明 | N-Channel Superjunction MOSFET | ||
メーカ | Chipown | ||
ロゴ | |||
このページの下部にプレビューとPN10HN60-CAI-T1ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PN10HN60
N-Channel Superjunction MOSFET
600V, 10A, 0.38Ω
Chipown
NeoFET®
General Description
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep
trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific
on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ
MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior
switching performance and ruggedness. The NeoFET fits the PC ATX Power, Server, Telecom, Adapter, LCD and
PDP TV, Lighting, UPS and industrial power applications.
Features
■ RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A
■ Extremely high dv/dt capablity
■ Very high commutation ruggedness
■ Extremely low losses due to very low Rdson*Qg
■ Ultra low gate charge ( Typ. Qg = 25nC)
■ Low effective output capacitance
■ 100% avalanche tested
■ JEDEC qualified, Pb-free plating
Applications
■ PC ATX Power
■ Adapter
■ LCD and PDP TV
■ Lighting
■ Server, Telecom,
■ UPS
■ Switching applications
Pin Assignments
TO-220
TO-220FP
Order codes
PN10HN60-CAI-T1
PN10HN60-CBI-T1
Package
TO220
TO220FP
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1110
1/8
1 Page PN10HN60
Table 3. Electrical Characteristics (TJ = 25°C, unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Leakage Reverse
VGS=0V,ID=250μA
VDS=600V,VGS=0V
VDS=600V,VGS=0V TJ=125°C
VDS=0V,VGS=30V
VDS=0V,VGS=-30V
On Characteristics
VGS(th)
RDS(ON)
Gate Threshold Voltage
VDS=VGS, ID=250μA
Static Drain-Source On-state Resistance VGS=10V,ID=5A
Dynamic Characteristics
gfs(1)
Ciss
Coss
Crss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,ID=5A
VGS=0V, VDS=100V
f=1MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Rise Time
td(ON)
Turn-off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=380V,RG=4.7
ID=4.5A,VGS=10V
VDS=380V,ID=4.5A
VGS=10V
600 - - V
- - 1 μA
- - 50 μA
- - 100 nA
- - -100 nA
2- 4 V
- 0.34 0.38 ohm
- 8.3
- 658
- 46
- 6.2
-
-
-
-
S
pF
- 13
-9
- 57
-- 10
- 25
- 3.9
- 4.4
-
-
-
-
-
-
-
ns
nC
Table 4. Source-Drain Diode Ratings and Characteristics (TJ = 25°C, unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IS Continuous Source Current
VGS=0V
ISM(2) Pulsed Source Current
VGS=0V
VSD(1) Diode Forward Voltage
IS=1A,VGS=0V
trr Reverse Recovery Time
IS=4.5A,VDD=300V dIF=100A/us
Qrr Reverse Recovery Charge
NOTES
(1) Pulsed test: Pulsed width=300μs, Duty Cycle=1.5%
(2) Pulsed width limited by safe operating area
MIN TYP MAX UNIT
- - 10
- - 30
- - 1.2
- 200 -
- 2200 -
A
A
V
ns
nC
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1110
3/8
3Pages PN10HN60
Figure 11. Transient Thermal Response Curve (TO-220)
Figure 12. Transient Thermal Response Curve (TO-220FP)
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1110
6/8
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ PN10HN60-CAI-T1 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
PN10HN60-CAI-T1 | N-Channel Superjunction MOSFET | Chipown |