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IRG4BC20UPbF の電気的特性と機能

IRG4BC20UPbFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4BC20UPbF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4BC20UPbF Datasheet, IRG4BC20UPbF PDF,ピン配置, 機能
PD - 95445A
IRG4BC20UPbF
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast Speed IGBT
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
• Lead-Free
C
G
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
13
6.5
52
52
± 20
5.0
60
24
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.50
–––
2.0 (0.07)
Max.
2.1
–––
80
–––
Units
°C/W
g (oz)
1
01/21/10

1 Page





IRG4BC20UPbF pdf, ピン配列
IRG4BC20UPbF
25
20
15
Square wave:
60% of rated
voltage
10
I
5
Ideal diodes
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 13W
Triangular wave:
I
Clamp voltage:
80% of rated
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
A
100
100
TJ = 25°C
TJ = 150°C
10
1
VGE = 15V
0.1 20µs PULSE WIDTH
0.1 1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
A
100
TJ = 150°C
10
TJ = 25°C
1
V CC = 10V
0.1 5µs PULSE WIDTH A
4 6 8 10 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4BC20UPbF 電子部品, 半導体
IRG4BC20UPbF
1.0
RG = 50
T J = 150°C
VCC = 480V
0.8 VGE = 15V
0.6
0.4
0.2
0.0 A
0 2 4 6 8 10 12 14
IC , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000 VGGEE= 20V
TJ = 125°C
100
SAFE OPERATING AREA
10
1
0.1
1 10 100 1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRG4BC20UPbF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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