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AMD540CE の電気的特性と機能

AMD540CEのメーカーはAnalog Powerです、この部品の機能は「N & P-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AMD540CE
部品説明 N & P-Channel MOSFET
メーカ Analog Power
ロゴ Analog Power ロゴ 




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AMD540CE Datasheet, AMD540CE PDF,ピン配置, 機能
Analog Power
AMD540CE
P & N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m()
40 46 @VGS = 4.5V
36 @VGS =10V
-40 48 @VGS =-4.5V
38 @VGS = -10V
ID (A)
28
33
-28
-33
• Low rDS(on) provides higher efficiency and
extends battery life
D1
• Low thermal impedance copper leadframe
DPAK saves board space
G
1
• Fast switching speed
• High performance trench technology
S1 G1 D S2 G2
S
1
N-Channel MOSFET
ESD Protected
2000V
S
2
G
2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUMRATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC ID
IDM
40 -40 V
20 -20
33 -33 A
±40 ±40
Continuous Source Current (Diode Conduction)a
IS
30 -30 A
Power Dissipationa
TA=25oC PD
50 50 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 -55 to 175 oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AMD540CE_F

1 Page





AMD540CE pdf, ピン配列
Analog Power
AMD540CE
Typical Electrical Characteristics (N-Channel)
60
10V
50
40
6V
4V
30
20
3V
10
0
0 0.5 1 1.5 2 2.5 3
VDS - Drain-to-Source Voltage (V)
Output Characteristics
50
25oC
45
TA = -55oC
40
125oC
35
30
25
20
15
10
5
0
3456789
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.2
0.18
0.16
0.14
0.12
0.1 4.5V
0.08
0.06
0.04
0.02 10V
0
0 5 10 15 20 25 30 35 40
ID - Drain Current (A)
On Resistance vs. Drain Current
10
VD= 15V
ID= 6.5A
8
6
4
2
0
0 2 4 6 8 10 12
QG, Total Gate Charge (nC)
Gate Charge
Ciss, Coss and Crss measurement of AM4541C Die1
NMOS
900
800
700
600
500
400
300
200
100
0
0
5 10 15
Vds(V)
20
Ciss
Coss
Crss
Capacitance
1.8
VGS = 10V
1.6
1.4
1.2
1
0.8
0.6
-50
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
On-Resistance vs. Junction Temperature
PRELIMINARY
3 Publication Order Number:
DS-AMD540CE_F


3Pages


AMD540CE 電子部品, 半導体
Analog Power
AMD540CE
Typical Electrical Characteristics (P-Channel)
100
10
1
0.1
0.01
0.001
0.0001
0
TA = 125oC
25oC
0.2 0.4 0.6 0.8
VSD - Source-to-Drain Voltage (V)
1
Source-Drain Diode Forward Voltage
1.2
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
-50
-25
0
ID = -250µA
25 50 75
TJ - Temperature (oC)
100 125 150
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
Id=10A
2 4 6 8 10
VGS Gate to Source Voltage(V)
On-Resistance with Gate to Source Voltage
50
SINGLE PULSE
RqJA = 125C/W
40 TA = 25C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Threshold Voltage
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1 D =0.5
0.2
0.1
0.1 0.05
0.02
0.01 0.01
0.001
0.0001
S INGLE P ULS E
0.001
0.01
0.1 1
t1 , TIM E (s ec)
10
Figure 11. Transient Thermal Response Curve
RqJA(t) = r(t) + RqJA
RqJA = 125oC/W
P (pk)
t1
t2
TJ - TA = P * Rq JA(t)
Duty Cycle, D = t1 / t2
100 1000
PRELIMINARY
6 Publication Order Number:
DS-AMD540CE_F

6 Page



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共有リンク

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部品番号部品説明メーカ
AMD540CE

N & P-Channel MOSFET

Analog Power
Analog Power


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