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AMD540CE PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 AMD540CE
部品説明 N & P-Channel MOSFET
メーカ Analog Power
ロゴ Analog Power ロゴ 



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AMD540CE Datasheet, AMD540CE PDF,ピン配置, 機能
Analog Power
AMD540CE
P & N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m()
40 46 @VGS = 4.5V
36 @VGS =10V
-40 48 @VGS =-4.5V
38 @VGS = -10V
ID (A)
28
33
-28
-33
• Low rDS(on) provides higher efficiency and
extends battery life
D1
• Low thermal impedance copper leadframe
DPAK saves board space
G
1
• Fast switching speed
• High performance trench technology
S1 G1 D S2 G2
S
1
N-Channel MOSFET
ESD Protected
2000V
S
2
G
2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUMRATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC ID
IDM
40 -40 V
20 -20
33 -33 A
±40 ±40
Continuous Source Current (Diode Conduction)a
IS
30 -30 A
Power Dissipationa
TA=25oC PD
50 50 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 -55 to 175 oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AMD540CE_F

1 Page





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