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PDF AMD534CE Data sheet ( Hoja de datos )
| Número de pieza | AMD534CE | |
| Descripción | N & P-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
AMD534CE
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 45 @VGS = 4.5V
35 @VGS =10V
-30 33 @VGS =-4.5V
23 @VGS = -10V
ID (A)
29
36
-32
39
• Low rDS(on) provides higher efficiency and
extends battery life
D1
S
2
• Low thermal impedance copper leadframe
DPAK saves board space
G
1
G
2
• Fast switching speed
• High performance trench technology
S1 G1 D S2 G2
S
1
N-Channel MOSFET
D2
P-Channel MOSFET
ESD Protected
2000V
ABSOLUTE MAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISENOTED)
Parameter
Symbol N-Channel P-Channel Units
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TA=25oC
TA=70oC
ID
Pulsed Drain Currentb
IDM
Continuous Source Current (Diode Conduction)a
IS
Power Dissipationa
TA=25oC PD
Operating Junction and Storage Temperature Range TJ, Tstg
30 -30
±20 ±20
36 -39
30 -26
40 -40
30 -30
50 50
-55 to 175
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AMD534CE_A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AMD534CE.PDF ] | |
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