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PDF 1N5352B Data sheet ( Hoja de datos )
| Número de pieza | 1N5352B | |
| Descripción | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE | |
| Fabricantes | TRSYS | |
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1N5348B THRU 1N5388B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts
FEATURES
l Low profile package
l Built-in strain relief
l Glass passivated junction
l Low inductance
l Typical ID less than 1 A above 13V
l High temperature soldering :
260 /10 seconds at terminals
l Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
DO-201AE
MECHANICAL DATA
Case: JEDEC DO-201AE Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Standard Packaging: 52mm tape
Weight: 0.04 ounce, 1.1 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
DC Power Dissipation @ TL=75 , Measure at Zero Lead Length(Fig. 1)
Derate above 75 (Note 1)
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note 1,2)
Operating Junction and Storage Temperature Range
SYMBOL
PD
IFSM
TJ,TSTG
VALUE
5.0
40.0
See Fig. 5
UNITS
Watts
mW/
Amps
-55 to +150
NOTES:
1. Mounted on 8.0mm2 copper pads to each terminal.
2. 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum.
1 page  
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = LAPD + TA
LA is the lead-to-ambient thermal resistance ( /W)
and PD is the power dissipation.
Junction Temperature, TJ , may be found from:
TJ = TL + TJL
TJL is the increase in junction temperature above the
lead temperature and may be found from Figure 3 for a
train of power pulses or from Figure 4 for dc power.
TJL = JLPD
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ( TJ) may be estimated.
Changes in voltage, Vz, can then be found from:
V = VZ TJ
VZ, the zener voltage temperature coefficient, is fount
from Figures 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly be
the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 3 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots
resulting in device degradation should the limits of
Figure. 5 be exceeded.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 1N5352B.PDF ] | |
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