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AP83T03GJB の電気的特性と機能

AP83T03GJBのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP83T03GJB
部品説明 N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP83T03GJB Datasheet, AP83T03GJB PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP83T03GJB
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
D
Simple Drive Requirement
Fast Switching Characteristic
G
RoHS Compliant & Halogen-Free
S
Description
AP83T03 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-251S short lead package is preferred for all
commercial-industrial through-hole applications without lead-
cutted.
BVDSS
RDS(ON)
ID
30V
6mΩ
75A
GD S
TO-251S(JB)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30
+20
75
53
240
60
-55 to 175
-55 to 175
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2.5
110
Units
/W
/W
1
201505271

1 Page





AP83T03GJB pdf, ピン配列
AP83T03GJB
200
T C =25 o C
160
120
80
10V
7.0V
6.0V
5.0V
V G = 4.0V
40
0
0 4 8 12 16
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
120
T C =175 o C
10V
7.0V
100 6.0V
5.0V
80 V G =4.0V
60
40
20
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
9
I D =30A
T C =25 o C
8
2.0
I D =40A
V G =10V
1.6
7
. 1.2
6
0.8
5
4
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
200
30
T j =175 o C
T j =25 o C
20
1.2
0.8
10 0.4
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
0.0
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
200
3


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共有リンク

Link :


部品番号部品説明メーカ
AP83T03GJ-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP83T03GJ-HF-3

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP83T03GJB

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics
Advanced Power Electronics


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