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PDF AP80N03GP-HF Data sheet ( Hoja de datos )
| Número de pieza | AP80N03GP-HF | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP80N03GP-HF (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Advanced Power
Electronics Corp.
AP80N03GS/P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
D BVDSS 30V
▼ Fast Switching Characteristic
RDS(ON)
8mΩ
▼ Simple Drive Requirement
G
ID
▼ RoHS Compliant & Halogen-Free
S
80A
Description
AP80N03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
G
DS
TO-220(P)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP80N03P) are available for low-profile
applications.
GD
S
TO-263(S)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
VGS Gate-Source Voltage
30 V
+20 V
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
TSTG
TJ
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
80
50
315
83.3
-55 to 150
-55 to 150
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
1.5
40
62
Unit
℃/W
℃/W
℃/W
1
201408263
1 page  
AP80N03GS/P-HF
16
I D =40A
14
V DS =16V
12
V DS =20V
10 V DS =24V
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
Q G , Total Gate Charge (nC)
f=1.0MHz
10000
Ciss
1000 Coss
Crss
100
1 5 9 13 17 21 25 29
V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
.
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3
2
1
0
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP80N03GP-HF.PDF ] | |
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