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PDF AP9938GEM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP9938GEM-HF | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP9938GEM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
D2
D2
D1
D1
SO-8
Description
AP9938 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
G2
S2
G1
S1
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
20V
18mΩ
8.5A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 4.5V3
Drain Current, VGS @ 4.5V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
20
+8
8.5
6.8
30
2
-55 to 150
V
V
A
A
A
W
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201501072
1 page  
MARKING INFORMATION
AP9938GEM-HF
9938GEM
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AP9938GEM-HF.PDF ] | |
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| AP9938GEM-HF | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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