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PDF AP9938GEYT-HF Data sheet ( Hoja de datos )
| Número de pieza | AP9938GEYT-HF | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP9938GEYT-HF (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Advanced Power
Electronics Corp.
AP9938GEYT-HF
Halogen-Free Product
DUAL N CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 1.8V Gate Drive
D1/D2
▼ Good Thermal Performance
▼ Fast Switching Performance
▼
RoHS
Compliant
&
Halogen-Free
S1
G1
S2
G2
Description
PMPAK® 3x3
AP9938 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 3x3 is special for voltage conversion application
using standard infrared reflow technique with the backside heat
sink to achieve the good thermal performance.
BVDSS
RDS(ON)
ID
20V
16mΩ
10A
D1/D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+8
10
8
30
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
10
50
Unit
℃/W
℃/W
1
201210172
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP9938GEYT-HF.PDF ] | |
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