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MBR30100CのメーカーはBCDです、この部品の機能は「HIGH VOLTAGE POWER SCHOTTKY RECTIFIER」です。 |
部品番号 | MBR30100C |
| |
部品説明 | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER | ||
メーカ | BCD | ||
ロゴ | |||
このページの下部にプレビューとMBR30100Cダウンロード(pdfファイル)リンクがあります。 Total 10 pages
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR30100C is available in standard TO-220-3,
TO-220-3 (2) and TO-220F-3 packages.
Features
• High Surge Capacity
• 150°C Operating Junction Temperature
• 30A Total (15A Per Diode Leg)
• Guard-ring for Stress Protection
• Pb-free Packages are available
Main Product Characteristics
IF(AV)
VRRM
TJ
VF(max)
2×15A
100V
150°C
0.75V
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets UL 94V-0 @ 0.125in.
• Weight (Approximately):
1.9Grams (TO-220-3, TO-220-3 (2) and
TO-220F-3)
• Finish: All External Surfaces Corrosion
Resistant and Terminal
• Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
Applications
• Power Supply Output Rectification
• Power Management
• Instrumentation
TO-220F-3
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR30100C
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
1
1 Page HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Ordering Information
MBR30100C
-
Data Sheet
MBR30100C
Circuit Type
Package
T: TO-220-3 (2)
TO-220-3 (Optional)
TF: TO-220F-3
E1: Lead Free
G1: Green
Blank: Tube
Package
TO-220-3 (2)
TO-220F-3
Part Number
Lead Free
MBR30100CT-
E1
MBR30100CTF
-E1
Green
MBR30100CT-
G1
MBR30100CTF-
G1
Marking ID
Lead Free
MBR30100CT-
E1
MBR30100CTF-
E1
Green
MBR30100CT-
G1
MBR30100CTF-
G1
Packing
Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
3
3Pages HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Typical Performance Characteristics
Data Sheet
MBR30100C
100
10
o
T =150 C
J
1
T =125oC
J
0.1
o
T =25 C
J
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
10000
1000
100
10
o
T =150 C
J
o
T =125 C
J
1
0.1
0.01
0
o
T =25 C
J
20 40 60 80
Reverse Voltage (V)
100
Figure 4. Typical Forward Voltage Per Diode
Figure 5. Typical Reverse Current Per Diode
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
100 105 110 115 120 125 130 135 140 145 150 155
Case Temperature (oC)
Figure 6. Average Forward Current vs.
Case Temperature (Square, Per Diode)
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
6
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ MBR30100C データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MBR30100 | SCHOTTKY BARRIER DIODE | PFS |
MBR30100 | 30 Amp Rectifier 20 to 100 Volts Schottky Barrier | Micro Commercial Components |
MBR30100 | Diode Schottky 100V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
MBR30100C | 30A SCHOTTKY BARRIER RECTIFIER | Unisonic Technologies |