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Número de pieza | MBR20200C | |
Descripción | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER | |
Fabricantes | BCD | |
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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR20200C is available in TO-220-3,
TO-220-3 (2) and TO-220F-3 packages.
Main Product Characteristics
IF(AV)
VRRM
TJ
VF(max)
2×10A
200V
150°C
0.9V
Features
• Low Forward Voltage: 0.9V @ 25°C
• High Surge Capacity
• 150°C Operating Junction Temperature
• 20A Total (10A Per Diode Leg)
• Guard-ring for Stress Protection
• Pb-free Package
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets UL 94V-0 @ 0.125in.
• Weight (Approximately): 1.9 Grams
• Finish: All External Surfaces Corrosion
Resistant and Terminal
• Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
Applications
• Power Supply Output Rectification
• Power Management
• Instrumentation
TO-220F-3
Mar. 2011 Rev. 1. 3
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR20200C
BCD Semiconductor Manufacturing Limited
1
1 page HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Typical Performance Characteristics
Data Sheet
MBR20200C
100
10
1
0.1
250C
1250C
1500C
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V , Instantaneous Forward Voltage (V)
F
Figure 4. Typical Forward Voltage Per Diode
10000
1000
100
250C
1250C
10 1500C
1
0.1
0.01
0
20 40 60 80 100 120 140 160 180 200
V , Reverse Voltage (V)
R
Figure 5. Typical Reverse Current Per Diode
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet MBR20200C.PDF ] |
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