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DMT3002LPS の電気的特性と機能

DMT3002LPSのメーカーはDiodesです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 DMT3002LPS
部品説明 N-CHANNEL ENHANCEMENT MODE MOSFET
メーカ Diodes
ロゴ Diodes ロゴ 




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DMT3002LPS Datasheet, DMT3002LPS PDF,ピン配置, 機能
Green DMT3002LPS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary
BVDSS
30V
RDS(ON)
1.6mΩ @ VGS = 10V
ID
TC = +25°C
100A
Description
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance. This device is ideal for use in power management and
load switch.
Features
Thermally Efficient Package Cooler Running Applications
<1.1mm Package Profile Ideal for Thin Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
DC-DC Converters
Load Switch
PowerDI5060-8
Mechanical Data
Case: PowerDI®5060-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Pin1
SD
SD
SD
GD
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMT3002LPS-13
Case
PowerDI5060-8
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
T3002LS
YY WW
= Manufacturer’s Marking
T3002LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
DMT3002LPS
Document number: DS38283 Rev. 4 - 2
SS SG
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated

1 Page





DMT3002LPS pdf, ピン配列
100.0
80.0
60.0
40.0
VGS = 10.0V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
20.0
VGS = 2.5V
0.0
0
VGS = 2.2V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
4.00
DMT3002LPS
30
VDS = 5.0V
25
20
15
10
5
0
1
10
125
150
85
25
-55
1.5 2 2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3
3.00
2.00
1.00
VGS = 4.5V
VGS = 10V
8
6
4
ID = 25A
2
0.00
0
20 40 60 80 100
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0
0 4 8 12 16
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
0.003
0.0025
VGS = 10V
0.002
0.0015
0.001
0.0005
150
125
85
25
-55
1.8
1.6
1.4
1.2
1
0.8
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 25A
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
0.6
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMT3002LPS
Document number: DS38283 Rev. 4 - 2
3 of 7
www.diodes.com
June 2016
© Diodes Incorporated


3Pages


DMT3002LPS 電子部品, 半導体
DMT3002LPS
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
D
D1
E1 E
PowerDI5060-8
Detail A
c
0(4X)
A1
e
1 01 (4X)
b (8X)
L
1
D3
e/2
b2 (4X)
K
A E3 E2
Detail A
G
D2 b3 (4X)
M
M1
L1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
X4
Y2
X3
Y3 Y1
Y5
Y7
Y4
C
Y6
X2
X1
XG
G1
Y(4x)
PowerDI5060-8
Dim Min Max Typ
A 0.90 1.10 1.00
A1 0.00 0.05
b 0.33 0.51 0.41
b2 0.200 0.350 0.273
b3 0.40 0.80 0.60
c 0.230 0.330 0.277
D 5.15 BSC
D1 4.70 5.10 4.90
D2 3.70 4.10 3.90
D3 3.90 4.30 4.10
E 6.15 BSC
E1 5.60 6.00 5.80
E2 3.28 3.68 3.48
E3 3.99 4.39 4.19
e 1.27 BSC
G 0.51 0.71 0.61
K 0.51 
L 0.51 0.71 0.61
L1 0.100 0.200 0.175
M 3.235 4.035 3.635
M1 1.00 1.40 1.21
Θ 10° 12° 11°
Θ1 6° 8° 7°
All Dimensions in mm
Dimensions
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
DMT3002LPS
Document number: DS38283 Rev. 4 - 2
6 of 7
www.diodes.com
June 2016
© Diodes Incorporated

6 Page



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部品番号部品説明メーカ
DMT3002LPS

N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes
Diodes


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