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DMT3002LPSのメーカーはDiodesです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE MOSFET」です。 |
部品番号 | DMT3002LPS |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE MOSFET | ||
メーカ | Diodes | ||
ロゴ | |||
このページの下部にプレビューとDMT3002LPSダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Green DMT3002LPS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary
BVDSS
30V
RDS(ON)
1.6mΩ @ VGS = 10V
ID
TC = +25°C
100A
Description
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance. This device is ideal for use in power management and
load switch.
Features
Thermally Efficient Package – Cooler Running Applications
<1.1mm Package Profile – Ideal for Thin Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
DC-DC Converters
Load Switch
PowerDI5060-8
Mechanical Data
Case: PowerDI®5060-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Pin1
SD
SD
SD
GD
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMT3002LPS-13
Case
PowerDI5060-8
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
T3002LS
YY WW
= Manufacturer’s Marking
T3002LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
DMT3002LPS
Document number: DS38283 Rev. 4 - 2
SS SG
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated
1 Page 100.0
80.0
60.0
40.0
VGS = 10.0V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
20.0
VGS = 2.5V
0.0
0
VGS = 2.2V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
4.00
DMT3002LPS
30
VDS = 5.0V
25
20
15
10
5
0
1
10
125℃
150℃
85℃
25℃
-55℃
1.5 2 2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3
3.00
2.00
1.00
VGS = 4.5V
VGS = 10V
8
6
4
ID = 25A
2
0.00
0
20 40 60 80 100
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0
0 4 8 12 16
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
0.003
0.0025
VGS = 10V
0.002
0.0015
0.001
0.0005
150℃
125℃
85℃
25℃
-55℃
1.8
1.6
1.4
1.2
1
0.8
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 25A
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
0.6
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
DMT3002LPS
Document number: DS38283 Rev. 4 - 2
3 of 7
www.diodes.com
June 2016
© Diodes Incorporated
3Pages DMT3002LPS
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
D
D1
E1 E
PowerDI5060-8
Detail A
c
0(4X)
A1
e
1 01 (4X)
b (8X)
L
1
D3
e/2
b2 (4X)
K
A E3 E2
Detail A
G
D2 b3 (4X)
M
M1
L1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
X4
Y2
X3
Y3 Y1
Y5
Y7
Y4
C
Y6
X2
X1
XG
G1
Y(4x)
PowerDI5060-8
Dim Min Max Typ
A 0.90 1.10 1.00
A1 0.00 0.05
b 0.33 0.51 0.41
b2 0.200 0.350 0.273
b3 0.40 0.80 0.60
c 0.230 0.330 0.277
D 5.15 BSC
D1 4.70 5.10 4.90
D2 3.70 4.10 3.90
D3 3.90 4.30 4.10
E 6.15 BSC
E1 5.60 6.00 5.80
E2 3.28 3.68 3.48
E3 3.99 4.39 4.19
e 1.27 BSC
G 0.51 0.71 0.61
K 0.51
L 0.51 0.71 0.61
L1 0.100 0.200 0.175
M 3.235 4.035 3.635
M1 1.00 1.40 1.21
Θ 10° 12° 11°
Θ1 6° 8° 7°
All Dimensions in mm
Dimensions
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
DMT3002LPS
Document number: DS38283 Rev. 4 - 2
6 of 7
www.diodes.com
June 2016
© Diodes Incorporated
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
DMT3002LPS | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |