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DMNH6042SPDQ の電気的特性と機能

DMNH6042SPDQのメーカーはDiodesです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 DMNH6042SPDQ
部品説明 N-CHANNEL ENHANCEMENT MODE MOSFET
メーカ Diodes
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DMNH6042SPDQ Datasheet, DMNH6042SPDQ PDF,ピン配置, 機能
DMNH6042SPDQ
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) Max
50m@ VGS = 10V
65m@ VGS = 4.5V
ID Max
TC = +25°C
24A
21A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Engine Management Systems
Body Control Electronics
DC-DC Converters
Features and Benefits
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low RDS(ON) Minimizes Power Losses
Low Qg Minimiszs Switching Losses
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: PowerDI5060-8 (Type C)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Top View
Pin1
Bottom View
D1 D2
S1 D1
G1 D1
S2
D2 G1
G2
G2 D2
Pin Out
Top View
S1 S2
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMNH6042SPDQ-13
Case
PowerDI5060-8 (Type C)
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D1 D1 D2 D2
H6042SD
YY WW
= Manufacturer’s Marking
H6042SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
S1 G1 S2 G2
DMNH6042SPDQ
Document number: DS37388 Rev. 4 - 2
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated

1 Page





DMNH6042SPDQ pdf, ピン配列
DMNH6042SPDQ
20
VGS = 10V
18
16 VGS = 5.0V
VGS = 4.5V
14
VGS = 4.0V
12
10
8
VGS = 3.5V
6
4
2
VGS = 2.8V
VGS = 3.0V
00 1 2 3 4 5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
20
VDS = 5.0V
NT()A 15
RE
R
U
C
10
N
RAI
D
,
I
D
5
0
1
TA = 175°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
2345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
6
0.08
0.07
0.06
0.05
VGS = 4.5V
0.04
0.03
VGS = 10V
0.02
0.01
0
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2.4
2.2
2
VGS = 10V
ID = 5.1A
1.8
1.6 VGS = 4.5V
1.4 ID = 4.4A
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
)
(E
0.08
0.075
VGS = 10V
C
N
0.07
TA 0.065
S
SI 0.06
E
R
N-
0.055
O 0.05
TA = 175°C
TA = 150°C
TA = 125°C
TA = 85°C
E
C
0.045
R
U
O
0.04
N-S 0.035
AI 0.03
R
D 0.025
, )N
O
0.02
(S
RD
0.015
TA = 25°C
TA = -55°C
0.01
1 3 5 7 9 11 13 15 17 19
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
21
0.1
0.09
0.08
0.07
0.06
VGS = 4.5V
ID = 4.4A
0.05
0.04
0.03
VGS = 10V
ID = 5.1A
0.02
0.01
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMNH6042SPDQ
Document number: DS37388 Rev. 4 - 2
3 of 7
www.diodes.com
June 2016
© Diodes Incorporated


3Pages


DMNH6042SPDQ 電子部品, 半導体
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8 (Type C)
D
D1
x
y
E1 E
c
1
Ø 1.000 Depth 0.07± 0.030
b1(8x)
b(8x)
1
D3
L
k1
e/2
b2(2x)
k
L4
E2 D2
M
D2
e
01(4x)
DETAIL A
0(4x)
A1
Seating Plane
A
DETAIL A
La L1
DMNH6042SPDQ
PowerDI5060-8 (Type C)
Dim Min Max Typ
A 0.90 1.10 1.00
A1 0 0.05 0.02
b 0.33 0.51 0.41
b1 0.300 0.366 0.333
b2 0.20 0.35 0.25
c 0.23 0.33 0.277
D 5.15 BSC
D1 4.85 4.95 4.90
D2 1.40 1.60 1.50
D3 -
- 3.98
E 6.15 BSC
E1 5.75 5.85 5.80
E2 3.56 3.76 3.66
e 1.27BSC
k - - 1.27
k1 0.56 -
-
L 0.51 0.71 0.61
La 0.51 0.71 0.61
L1 0.05 0.20 0.175
L4 -
- 0.125
M 3.50 3.71 3.605
x - - 1.400
y - - 1.900
θ 10° 12° 11°
θ1 6° 8° 7°
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8 (Type C)
X4
8
Y2
Y3
X3
X1
X2
1
XC
Y1
G1
Y(4x)
G
DMNH6042SPDQ
Document number: DS37388 Rev. 4 - 2
6 of 7
www.diodes.com
Dimensions
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Value
(in mm)
1.270
0.660
0.820
0.610
3.910
1.650
1.650
4.420
1.270
1.020
3.810
6.610
June 2016
© Diodes Incorporated

6 Page



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部品番号部品説明メーカ
DMNH6042SPD

N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes
Diodes
DMNH6042SPDQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes
Diodes


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