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PDF H9TQ17ABJTMCUR Data sheet ( Hoja de datos )
| Número de pieza | H9TQ17ABJTMCUR | |
| Descripción | 16GB eNAND (x8) / LPDDR3 16Gb(x32) | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
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CI-MCP Specification
16GB eNAND (x8)
+ 16Gb LPDDR3 (x32)
This document is a general product description and is subject to change without notice. SK hynix does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 0.1 / Mar. 2014
1
1 page  
Preliminary
H9TQ17ABJTMCUR series
16GB eNAND (x8) / LPDDR3 16Gb(x32)
ORDERING INFORMATION
Part Number
Memory
Combination
Operation
Voltage
H9TQ17ABJTMCUR-KTM
e-NAND
LPDDR3
3.3V
1.8V/1.2/1.2/1.2
H9TQ17ABJTMCUR-KUM
e-NAND
LPDDR3
3.3V
1.8V/1.2/1.2/1.2
Density
16GB (x8)
16Gb (x32)
16GB (x8)
16Gb (x32)
Speed
Package
200MHz
221Ball FBGA
DDR3 1600 (Lead & Halogen Free)
200MHz
221Ball FBGA
DDR3 1866 (Lead & Halogen Free)
H 9 TQ 1 7 A B J T M C U R - K * M
SK Hynix Memory
MCP/PoP
Product Mode :
CI-MCP NAND DDR3
Density, Stack, Block Size
& Page Buffer for NVM :
128Gb, DDP, LB, MLC
Voltage & I/O for NVM :
3.3V, x8
Density, Stack, CH & CS for DRAM :
16Gb, DDP, 1Ch, 2CS
Voltage, I/O & Option for DRAM :
1.2v, x32, LPDDR3
Temperature :
Standard (-25~85’C)
DRAM Speed
Ci-NAND Speed : 200Mhz
Package Material :
Lead & Halogen Free
Package Type :
FBGA 221 Ball 11.5x13
Generation : 1st
Rev 0.1 / Mar. 2014
5
5 Page 
2. e-NAND Characteristics
2.1 Performance
Preliminary
H9TQ17ABJTMCUR series
16GB eNAND (x8) / LPDDR3 16Gb(x32)
Density
16GB
Sequential read (MB/s)
300
Sequential write (MB/s)
40
Test condition
• Option: Cache / Packed / HS400
• Test tool: uBOOT (Without O/S)
• Chunk size : 1MB, Test area : 1GB
2.2 Power
2.1.1 Active power consumption during operation
Density
32GB(QDP)
Write
Read
Max RMS current
Icc Iccq
150mA
100mA
80mA
200mA
• Room temperature : 25℃
• RMS current consumption is over a period of 100ms
• Vcc : 3.3V & Vccq : 1.8V
• HS400 enabled
2.1.2 Low power mode (Standby)
Density
32GB(QDP)
Icc
70uA
• In Standby Power mode, CTRL Vccq & NAND Vcc power supply is switched on
• No data transaction period before entering sleep status
• Room temperature : 25℃
2.1.3 Low power mode (Sleep)
Iccq
120uA
Density
32GB(QDP)
Icc
0
Iccq
120uA
• In sleep state, triggered by CMD5, NAND Vcc power supply is switched off (CTRL Vccq on)
• Room temperature : 25℃
Rev 0.1 / Mar. 2014
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet H9TQ17ABJTMCUR.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| H9TQ17ABJTMCUR | 16GB eNAND (x8) / LPDDR3 16Gb(x32) | Hynix Semiconductor |
| H9TQ17ABJTMCUR-KTM | 16GB eNAND (x8) / LPDDR3 16Gb(x32) | Hynix Semiconductor |
| H9TQ17ABJTMCUR-KUM | 16GB eNAND (x8) / LPDDR3 16Gb(x32) | Hynix Semiconductor |
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