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PDF AP70SL950AH Data sheet ( Hoja de datos )
| Número de pieza | AP70SL950AH | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP70SL950AH (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP70SL950AH
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP70SL950A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
VDS @ Tj,max.
RDS(ON)
ID3
750V
0.95Ω
4.5A
G
D
S
TO-252(H)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
700 V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
+20 V
4.5 A
2.8 A
12 A
dv/dt
PD@TC=25℃
PD@TA=25℃
EAS
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
Total Power Dissipation4
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
50
36.7
2
27
15
V/ns
W
W
mJ
V/ns
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient4
Value
3.4
62.5
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201507271
1 page  
AP70SL950AH
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
10
T j =25 o C
8
6
.
4
2
V GS =10V
0
0123456
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
50
40
30
20
10
0
0 50 100
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
150
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP70SL950AH.PDF ] | |
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