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AP70SL380AS の電気的特性と機能

AP70SL380ASのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP70SL380AS
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP70SL380AS Datasheet, AP70SL380AS PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP70SL380AS
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Rg & UIS Test
Fast Switching Characteristic
D
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
AP70SL380A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
VDS @ Tj,max.
RDS(ON)
ID3
750V
0.38Ω
11A
G D S TO-263(S)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
700 V
VGS
ID@TC=25
ID@TC=100
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
+20 V
11 A
6.5 A
24 A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
50
V/ns
PD@TC=25
PD@TA=25
EAS
dv/dt
Total Power Dissipation
Total Power Dissipation4
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
78.1 W
3.12 W
75 mJ
15 V/ns
TSTG
Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Value
1.6
40
Units
/W
/W
Data & specifications subject to change without notice
1
201505201

1 Page





AP70SL380AS pdf, ピン配列
AP70SL380AS
24
T C =25 o C
20
16
10V
9.0V
8.0V
7.0V
12
8 V G =6.0V
4
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
T C =150 o C
10
8
6
10V
9.0V
8.0V
7.0V
0.37Ω V G =6.0V
4
2
0
0 8 16 24 32
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
480
I D =3.2A
T C =25 o C
440
400
.
360
320
280
4 5 6 7 8 9 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T j = 150 o C
T j = 25 o C
4
2
0
0 0.2 0.4 0.6 0.8 1
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
4
I D =3.2A
V G =10V
3
2
1
0
-100
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
2
I D =250uA
1.5
1
0.5
0
-100
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3


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共有リンク

Link :


部品番号部品説明メーカ
AP70SL380AH

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP70SL380AI

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP70SL380AJ

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP70SL380AS

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


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