|
|
AP65SL600AINのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP65SL600AIN |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP65SL600AINダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Advanced Power
Electronics Corp.
AP65SL600AIN
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP65SL600A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON)
ID
700V
0.6Ω
7A
G
DS
TO-220CFM-NL(IN)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
dv/dt
PD@TC=25℃
PD@TA=25℃
EAS
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3,4
Drain Current, VGS @ 10V3,4
Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
650
+20
7
4.4
18
50
27.8
1.92
36.7
15
V
V
A
A
A
V/ns
W
W
mJ
V/ns
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.5
65
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201506221
1 Page AP65SL600AIN
16
T C =25 o C
12
8
8
10V
9.0V
T C =150 o C
10V
9.0V
8.0V 8.0V
6 7.0V
0.37Ω
7.0V
4
V G =6.0V
4
V G =6.0V
0
0 8 16 24 32
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
580
I D =2A
560 T C =25 o C
540
.520
500
480
460
5 6 7 8 9 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
4
T j = 150 o C
2
T j = 25 o C
0
0 0.2 0.4 0.6 0.8 1
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
4
I D =2A
V G =10V
3
2
1
0
-100
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
2
I D =250uA
1.6
1.2
0.8
0.4
0
-100
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ AP65SL600AIN データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP65SL600AI | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP65SL600AIN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |