DataSheet.jp

AP65SL600AIN の電気的特性と機能

AP65SL600AINのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP65SL600AIN
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




このページの下部にプレビューとAP65SL600AINダウンロード(pdfファイル)リンクがあります。
Total 5 pages

No Preview Available !

AP65SL600AIN Datasheet, AP65SL600AIN PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP65SL600AIN
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Rg & UIS Test
Fast Switching Characteristic
D
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
AP65SL600A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON)
ID
700V
0.6Ω
7A
G
DS
TO-220CFM-NL(IN)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
dv/dt
PD@TC=25
PD@TA=25
EAS
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3,4
Drain Current, VGS @ 10V3,4
Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
650
+20
7
4.4
18
50
27.8
1.92
36.7
15
V
V
A
A
A
V/ns
W
W
mJ
V/ns
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.5
65
Units
/W
/W
Data & specifications subject to change without notice
1
201506221

1 Page





AP65SL600AIN pdf, ピン配列
AP65SL600AIN
16
T C =25 o C
12
8
8
10V
9.0V
T C =150 o C
10V
9.0V
8.0V 8.0V
6 7.0V
0.37Ω
7.0V
4
V G =6.0V
4
V G =6.0V
0
0 8 16 24 32
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
580
I D =2A
560 T C =25 o C
540
.520
500
480
460
5 6 7 8 9 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
4
T j = 150 o C
2
T j = 25 o C
0
0 0.2 0.4 0.6 0.8 1
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
4
I D =2A
V G =10V
3
2
1
0
-100
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
2
I D =250uA
1.6
1.2
0.8
0.4
0
-100
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ AP65SL600AIN データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
AP65SL600AI

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP65SL600AIN

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap