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PDF AP65SL600AH Data sheet ( Hoja de datos )

Número de pieza AP65SL600AH
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP65SL600AH Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP65SL600AH
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Rg & UIS Test
Fast Switching Characteristic
D
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
AP65SL600A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
VDS @ Tj,max.
RDS(ON)
ID
700V
0.6Ω
7A
G
D
S
TO-252(H)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
650 V
VGS
ID@TC=25
ID@TC=100
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
+20 V
7A
4.4 A
18 A
dv/dt
PD@TC=25
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
50
62.5
V/ns
W
PD@TA=25
EAS
dv/dt
Total Power Dissipation
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
2W
36.7 mJ
15 V/ns
TSTG
Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Value
2
62.5
Units
/W
/W
Data & specifications subject to change without notice
1
201505201

1 page




AP65SL600AH pdf
MARKING INFORMATION
65SL600A
YWWSSS
Part Number
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
AP65SL600AH
.
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