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PDF AP65SL130AP Data sheet ( Hoja de datos )
| Número de pieza | AP65SL130AP | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP65SL130AP (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP65SL130AP
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP65SL130A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications.
The low thermal resistance and low package cost contribute to the
worldwide popular package.
VDS @ Tj,max.
RDS(ON)
ID
700V
0.13Ω
26.2A
G
DS
TO-220(P)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
650 V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
dv/dt
PD@TC=25℃
PD@TA=25℃
EAS
dv/dt
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …480V )
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Peak Diode Recovery dv/dt5
+20
26.2
16.5
66
50
178
2
300
15
V
A
A
A
V/ns
W
W
mJ
V/ns
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
0.7
62
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201505211
1 page  
AP65SL130AP
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
1000
T j =25 o C
800
600
.
400
200 V GS =10V
0
0 10 20 30 40 50 60
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
200
160
120
80
40
0
0 50 100
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
150
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP65SL130AP.PDF ] | |
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