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PDF AP65SL130AI Data sheet ( Hoja de datos )
| Número de pieza | AP65SL130AI | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP65SL130AI (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP65SL130AI
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP65SL130A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink
VDS @ Tj,max.
RDS(ON)
ID3,4
700V
0.13Ω
26.2A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
.
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
dv/dt
PD@TC=25℃
PD@TA=25℃
EAS
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3,4
Drain Current, VGS @ 10V3,4
Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …480V )
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
650
+20
26.2
16.5
66
50
33.7
1.92
300
15
-55 to 150
-55 to 150
Units
V
V
A
A
A
V/ns
W
W
mJ
V/ns
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.7
65
Units
℃/W
℃/W
1
201505211
1 page  
AP65SL130AI
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
1000
T j =25 o C
800
600
.
400
200 V GS =10V
0
0 10 20 30 40 50 60
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
50
40
30
20
10
0
0 50 100
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
150
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP65SL130AI.PDF ] | |
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