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PDF AP65SL099AWL Data sheet ( Hoja de datos )
| Número de pieza | AP65SL099AWL | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP65SL099AWL (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP65SL099AWL
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP65SL099A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-247 package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
VDS @ Tj,max.
RDS(ON)
ID3
700V
99mΩ
38A
TO-247 (WL)
S
D
G
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
dv/dt
PD@TC=25℃
PD@TA=25℃
EAS
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …480V )
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Peak Diode Recovery dv/dt5
650
+20
38
23.5
94
50
277.8
3.12
768
10
V
V
A
A
A
V/ns
W
W
mJ
V/ns
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
0.45
40
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201505211
1 page  
AP65SL099AWL
2
I D =1mA
1.6
300
240
1.2 180
0.8 120
0.4 60
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
250
T j =25 o C
200
V GS =6.0V
150
.
100
8.0V
V GS =10V
50
0
0 50 100
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
150
0
0 10 20 30 40 50 60
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP65SL099AWL.PDF ] | |
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