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PDF AP60SL600AIN Data sheet ( Hoja de datos )

Número de pieza AP60SL600AIN
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP60SL600AIN Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP60SL600AIN
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Rg & UIS Test
Fast Switching Characteristic
D
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
AP60SL600A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON)
ID3,4
650V
0.6Ω
7A
G
DS
TO-220CFM-NL(IN)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
dv/dt
PD@TC=25
PD@TA=25
EAS
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3,4
Drain Current, VGS @ 10V3,4
Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
600
+20
7
4.4
18
50
26
1.92
36.7
15
V
V
A
A
A
V/ns
W
W
mJ
V/ns
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.8
65
Units
/W
/W
Data & specifications subject to change without notice
1
201506301

1 page




AP60SL600AIN pdf
MARKING INFORMATION
AP60SL600AIN
60SL600A
YWWSSS
Part Number
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
.
5

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