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AP60SL600AH の電気的特性と機能

AP60SL600AHのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP60SL600AH
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP60SL600AH Datasheet, AP60SL600AH PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP60SL600AH
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Rg & UIS Test
Fast Switching Characteristic
D
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
AP60SL600A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
VDS @ Tj,max.
RDS(ON)
ID3
650V
0.6Ω
7A
G
D
S
TO-252(H)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
600 V
VGS
ID@TC=25
ID@TC=100
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
+20 V
7A
4.4 A
18 A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
50
V/ns
PD@TC=25
PD@TA=25
EAS
dv/dt
Total Power Dissipation
Total Power Dissipation4
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
56.8 W
2W
36.7 mJ
15 V/ns
TSTG
Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Value
2.2
62.5
Units
/W
/W
Data & specifications subject to change without notice
1
201505191

1 Page





AP60SL600AH pdf, ピン配列
AP60SL600AH
12
T C =25 o C
10
8
10V
9.0V
8.0V
7.0V
6
4
2 V G =6.0V
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
8
T C =150 o C
6
4
0.37Ω
10V
9.0V
8.0V
7.0V
6.0V
2
V G =5.0V
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
600
I D =2A
580 T C =25 o C
560
.540
520
500
480
5 6 7 8 9 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
4
T j = 150 o C
2
T j = 25 o C
0
0 0.2 0.4 0.6 0.8 1
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
3.2
I D =2A
V G =10V
2.4
1.6
0.8
0
-100 -50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
2
I D =250uA
1.6
1.2
0.8
0.4
0
-100
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3


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共有リンク

Link :


部品番号部品説明メーカ
AP60SL600AH

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP60SL600AI

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP60SL600AIN

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP60SL600AJ

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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