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Número de pieza | AP30G40GEO-HF | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
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No Preview Available ! Advanced Power
Electronics Corp.
AP30G40GEO-HF
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ ICP=150A @VGE=3.0V
▼ Low Gate Drive
▼ Strobe Flash Applications
▼ RoHS Compliant & Halogen-Free
C
C
C
C
TSSOP-8
G
E
E
E
VCE
ICP
G
400V
150A
C
E
Absolute Maximum Ratings
Symbol
Parameter
VCE
VGEP
ICP
PD@TA=25oC1
TSTG
TJ
Collector-Emitter Voltage
Peak Gate-Emitter Voltage
Pulsed Collector Current, VGE @ 3.0V
Maximum Power Dissipation
Storage Temperature Range
Junction Temperature Range
Rating
400
+6
150
1
-55 to 150
-55 to 150
Units
V
V
A
W
oC
oC
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
IGES Gate-Emitter Leakage Current VGE=+ 6V, VCE=0V
--
ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V
--
VCE(sat)
Collector-Emitter Saturation Voltage VGE=3V, ICP=150A (Pulsed)
- 5.5
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=1mA
0.3 -
Qg Total Gate Charge
IC=40A
- 60
Qge Gate-Emitter Charge
VCE=200V
-6
Qgc Gate-Collector Charge
VGE=4V
- 25
td(on)
Turn-on Delay Time
VCC=320V
- 200
tr
td(off)
Rise Time
Turn-off Delay Time
IC=150A
RG=10Ω
- 900
- 800
tf Fall Time
VGE=3V
- 650
Cies Input Capacitance
VGE=0V
- 4140
Coes Output Capacitance
VCE=30V
- 30
Cres
RthJA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
- 20
--
Max.
+30
10
9
1.2
96
-
-
-
-
-
-
-
-
-
125
Units
uA
uA
V
V
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
oC/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.
Data and specifications subject to change without notice
1
201111251
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet AP30G40GEO-HF.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP30G40GEO-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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