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PDF AP30G40AEO Data sheet ( Hoja de datos )
| Número de pieza | AP30G40AEO | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
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Advanced Power
Electronics Corp.
AP30G40AEO
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ ICP=130A @VGE=3.3V
▼ Low Gate Drive
▼ Strobe Flash Applications
▼ RoHS Compliant & Halogen-Free
C
C
C
C
TSSOP-8
G
E
E
E
VCE
ICP
G
400V
130A
C
E
Absolute Maximum Ratings
Symbol
Parameter
Rating
VCE Collector-Emitter Voltage
400
VGEP
Peak Gate-Emitter Voltage
+6
ICP
PD@TA=25oC1
Pulsed Collector Current, VGE @ 3.3V
Maximum Power Dissipation
130
1
TSTG
Storage Temperature Range
-55 to 150
TJ Junction Temperature Range
-55 to 150
.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
IGES Gate-Emitter Leakage Current VGE=+ 6V, VCE=0V
--
ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V
--
VCE(sat)
Collector-Emitter Saturation Voltage VGE=3.3V, ICP=90A (Pulsed)
- 2.9
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=1mA
0.3 -
Qg Total Gate Charge
IC=40A
- 57
Qge Gate-Emitter Charge
VCE=200V
-7
Qgc Gate-Collector Charge
VGE=4V
- 18
td(on)
Turn-on Delay Time
VCC=320V
- 200
tr
td(off)
Rise Time
Turn-off Delay Time
IC=130A
RG=10Ω
- 1.3
- 600
tf Fall Time
VGE=3.3V
- 1.4
Cies Input Capacitance
VGE=0V
- 4000
Coes Output Capacitance
VCE=30V
- 30
Cres
RthJA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
- 20
--
Units
V
V
A
W
oC
oC
Max. Units
+30 uA
10 uA
6V
1.2 V
91.2 nC
- nC
- nC
- ns
- us
- ns
- us
- pF
- pF
- pF
125 oC/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.
Data and specifications subject to change without notice
1
201503311
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP30G40AEO.PDF ] | |
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