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AP20GT60W の電気的特性と機能

AP20GT60WのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP20GT60W
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP20GT60W Datasheet, AP20GT60W PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP20GT60W
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
High Speed Switching
Low Saturation Voltage
VCE(sat),typ.=1.8V@IC=20A
RoHS Compliant & Halogen-Free
G
C
E
C VCES
IC
TO-3P
G
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
VCES
Collector-Emitter Voltage
600
VGE
IC@TC=25oC
IC@TC=100oC
ICM
PD@TC=25oC
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current1
Maximum Power Dissipation
+20
40
20
160
125
TSTG
Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range
150
600V
20A
C
E
Units
V
V
A
A
A
W
Notes:
1.Pulse width limited by Max. junction temperature .
.
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
IGES
ICES
VCE(sat)
VCE(sat)
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
VGE=+20V, VCE=0V
VCE=600V, VGE=0V
VGE=15V, IC=20A
VGE=15V, IC=35A
VCE=VGE, IC=250uA
IC=20A
VCE=480V
VGE=15V
VCE=480V,
Ic=20A,
VGE=15V,
RG=5,
Inductive Load
VGE=0V
VCE=30V
Cres Reverse Transfer Capacitance
f=1.0MHz
Value
1
40
Units
/W
/W
Min. Typ. Max. Units
- - +100 nA
- - 500 uA
- 1.8 2.5 V
- 2 2.7 V
2 - 6V
- 100 160 nC
- 24 - nC
- 40 - nC
- 50 - ns
- 20 - ns
- 135 -
ns
- 190 380 ns
- 0.3 - mJ
- 0.9 - mJ
- 3400 5440 pF
- 75 - pF
- 50 - pF
Data and specifications subject to change without notice
1
201502253

1 Page





AP20GT60W pdf, ピン配列
AP20GT60W
160
120
80
40
0
0 25 50 75 100 125 150
Junction Temperature ( )
Fig7. Power Dissipation vs. Junction
Temperature
20
T C =25 o C
15
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
t , Pulse Width (s)
1
Fig 8. Effective Transient Thermal
Impedance
10
20
T C = 150 o C
15
.10
5
I C = 60 A
40 A
20 A
0
0 4 8 12 16
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
20
10
5
I C = 60 A
40 A
20 A
0
0 4 8 12 16 20
V GE , Gate-Emitter Voltage(V)
Fig 10. Saturation Voltage vs. VGE
16 1000
12
100
8
10
4
0
0
20 Q G 4,0 Gate Ch60arge (nC8)0 100 120
Fig 11. Gate Charge Characterisitics
1
0.1
V
1
CE
,
Collector-Emitter
10 100
Voltage(V)
1000
Fig 12. Turn-off SOA
10000
3


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共有リンク

Link :


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AP20GT60I

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