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Número de pieza | AP20GT60SW | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP20GT60SW (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP20GT60SW
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat),Typ.=1.8V@IC=20A
▼ Built-in Fast Recovery Diode
▼ RoHS Compliant & Halogen-Free
G
C
E
Absolute Maximum Ratings
Symbol
VCES
VGE
IC@TC=25℃
IC@TC=100℃
ICM
IDM
PD@TC=25℃
TSTG
TJ
TL
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current1
Collector to Emitter Diode Forward Current 1
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
C VCES
IC
TO-3P
G
Rating
600
+20
40
20
160
40
125
-55 to 150
150
300
600V
20A
C
E
Units
V
V
A
A
A
A
W
oC
oC
oC
Notes:
1. Pulse width limited by max. junction temperature .
Thermal Data
.
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
IGES
ICES
VCE(sat)
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGE=+20V, VCE=0V
VCE=600V, VGE=0V
VGE=15V, IC=20A
VCE=VGE, IC=250uA
IC=20A
VCE=480V
VGE=15V
VCE=480V,
Ic=20A,
VGE=15V,
RG=5Ω,
Inductive Load
VGE=0V
VCE=30V
f=1.0MHz
Value
1
1.5
40
Units
oC/W
oC/W
oC/W
Min. Typ. Max. Units
- - +100 nA
- - 1 mA
- 1.8 2.3 V
2 - 6V
- 100 160 nC
- 24 - nC
- 40 - nC
- 50 - ns
- 20 - ns
- 135 -
ns
- 190 380 ns
- 0.3 - mJ
- 0.9 - mJ
- 3400 5440 pF
- 75 - pF
- 50 - pF
VF FRD Forward Voltage
trr FRD Reverse Recovery Time
Qrr FRD Reverse Recovery Charge
IF=20A
IF=10A
di/dt = 100 A/μs
- 1.65 2
- 50 -
- 80 -
V
ns
nC
Data and specifications subject to change without notice
1
201502243
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AP20GT60SW.PDF ] |
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