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PDF AP20G45EJ Data sheet ( Hoja de datos )
| Número de pieza | AP20G45EJ | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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AP20G45EH/J
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Description
* High Input Impedance
* High Pick Current Capability
* 4.5V Gate Drive
* Strobe Flash Applications
G
C E TO-252(H)
G
C
E
TO-251(J)
VCES
ICP
G
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGE Gate-Emitter Voltage
IGEP Pulsed Gate-Emitter Voltage
ICP
PD@TC=25℃
Pulsed Collector Current
Maximum Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Rating
450
±6
±8
130
20
-55 to 150
-55 to 150
450V
130A
C
E
Units
V
V
V
A
W
℃
℃
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
IGES
Gate-Emitter Leakage Current
VGE=6V, VCE=0V
- - 10
ICES
Collector-Emitter Leakage Current (Tj=25℃)
VCE=450V, VGE=0V
- - 10
VCE(sat)
Collector-Emitter Saturation Voltage VGE=4.5V, ICP=130A (Pulsed)
- 58
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
- - 1.2
Qg Total Gate Charge
IC=40A
- 51 -
Qge Gate-Emitter Charge
VCE=300V
-2-
Qgc Gate-Collector Charge
VGE=5V
- 5.4 -
td(on)
Turn-on Delay Time
VCC=200V
- 5.5 -
tr Rise Time
td(off)
Turn-off Delay Time
IC=40A
RG=25Ω
- 72 -
- 640 -
tf Fall Time
VGE=5V
- 2.6 -
Cies Input Capacitance
VGE=0V
- 2095 -
Coes Output Capacitance
VCE=25V
- 145 -
Cres Reverse Transfer Capacitance f=1.0MHz
- 35 -
Rthj-c
Thermal Resistance Junction-Case
- -6
Units
uA
uA
V
V
nC
nC
nC
ns
ns
ns
us
pF
pF
pF
℃/W
Data and specifications subject to change without notice
200124032
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP20G45EJ.PDF ] | |
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