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PDF STN6303 Data sheet ( Hoja de datos )
| Número de pieza | STN6303 | |
| Descripción | Dual N Channel Enhancement Mode MOSFET | |
| Fabricantes | Stanson Technology | |
| Logotipo |  |
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STN6303
Dual N Channel Enhancement Mode MOSFET
1.0A
DESCRIPTION
STN6303 is the dual N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer circuits where high-side switching, low in-line power loss and
resistance to transients are needed.
PIN CONFIGURATION
SOT-363 / SC70-6L
D1 G2 S2
53YW
FEATURE
23V/0.5A, R =DS(ON) 400m-ohm@VGS =4.5V
23V/0.75A, RDS(ON) =550m-ohm@VGS =2.5V
Super high density cell design for extremely
low RDS(ON)
Exceptional low on-resistance and maximum
DC current capability
SOT-363 / SC70-6L package design
S1 G D2
Y: Year
W: Process Code
ORDERING INFORMATION
Part Number
Package
STN6303
SOT-363 / SC70-6L
※ Process Code : A ~ Z(1~26) ; a ~ z(27~52)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
Part Marking
53
STN6303 2008. V1
1 page  
TYPICAL CHARACTERICTICS
STN6303
Dual N Channel Enhancement Mode MOSFET
1.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN6303 2008. V1
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STN6303.PDF ] | |
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