(PDF) STN4946 Datasheet - Dual N Channel Enhancement Mode MOSFET

Número de pieza	STN4946
Descripción	Dual N Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! STN4946 Dual N Channel Enhancement Mode MOSFET 12A DESCRIPTION The STN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer Li-ion Battery , power management and other battery powered circuits where high-side switching . PIN CONFIGURATION SOP-8 FEATURE � 60V/12A, RDS(ON) = 44mΩ (Typ.) @VGS = 10V � 60V/8.0A, RDS(ON) =50mΩ @VGS = 4.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING SOP-8 1 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4946 2009. V1 1 page STN4946 Dual N Channel Enhancement Mode MOSFET 12A TYPICAL CHARACTERICTICS (25℃ Unless Note) 5 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4946 2009. V1 5 Page

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PDF STN4946 Data sheet ( Hoja de datos )