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Número de pieza | STN4546 | |
Descripción | N Channel Enhancement Mode MOSFET | |
Fabricantes | Stanson Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STN4546 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! STN4546
N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
STN4526 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
� 40V/10.0A, RDS(ON) = 20mΩ (Typ.)
@VGS = 10V
� 40V/8.0A, RDS(ON) = 23mΩ
@VGS = 4.5V
� 40V/6.0A, RDS(ON) = 27mΩ
@VGS = 2.5V
� Super high density cell design for
extremely low RDS(ON)
� Exceptional on-resistance and
maximum DC current capability
� SOP-8 package design
PART MARKING
STN4546
YA
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4546 2009. V1
1 page TYPICAL CHARACTERICTICS
STN4546
N Channel Enhancement Mode MOSFET
6.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4546 2009. V1
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet STN4546.PDF ] |
Número de pieza | Descripción | Fabricantes |
STN4546 | N Channel Enhancement Mode MOSFET | Stanson Technology |
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