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Número de pieza | STN4426 | |
Descripción | N Channel Enhancement Mode MOSFET | |
Fabricantes | Stanson Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STN4426 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! STN4426
N Channel Enhancement Mode MOSFET
8.0A
DESCRIPTION
STN4426 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, notebook computer power management
and other battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
� 20V/8.0A, RDS(ON) = 28mΩ (Typ.)
@VGS = 4.5V
� 20V/7.0A, RDS(ON) = 36mΩ
@VGS = 2.5V
� 20V/3.0A, RDS(ON) = 42mΩ
@VGS = 1.8V
� Super high density cell design for
extremely low RDS(ON)
� Exceptional on-resistance and
maximum DC current capability
� SOP-8 package design
PART MARKING
SOP-8
STN4426
SYA
S: Subcontractor Y: Year Code
A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4426 2009. V1
1 page TYPICAL CHARACTERICTICS
STN4426
N Channel Enhancement Mode MOSFET
8.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4426 2009. V1
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet STN4426.PDF ] |
Número de pieza | Descripción | Fabricantes |
STN4426 | N Channel Enhancement Mode MOSFET | Stanson Technology |
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