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STN4416のメーカーはStanson Technologyです、この部品の機能は「N Channel Enhancement Mode MOSFET」です。 |
部品番号 | STN4416 |
| |
部品説明 | N Channel Enhancement Mode MOSFET | ||
メーカ | Stanson Technology | ||
ロゴ | |||
このページの下部にプレビューとSTN4416ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
STN4416
N Channel Enhancement Mode MOSFET
10A
DESCRIPTION
STN4416 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
� 20V/10A, RDS(ON) = 11mΩ (Typ.)
@VGS = 4.5V
� 20V/5.6A, RDS(ON) = 23mΩ
@VGS = 2.5V
� Super high density cell design for
extremely low RDS(ON)
� Exceptional on-resistance and
maximum DC current capability
� SOP-8 package design
PART MARKING
SOP-8
STN4416
YA
Y: Year Code
A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4416 2009. V1
1 Page STN4416
N Channel Enhancement Mode MOSFET
10A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
Gate Leakage Current
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage
Drain Current
IDSS
On-State Drain
Current
Drain-source On-
Resistance
Forward
Transconductance
Diode Forward Voltage
ID(on)
RDS(on)
gfs
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=20V,VGS=0V
VDS=20V,VGS=0V
TJ=85℃
VDS≧5V,VGS=10V
VGS=4.5V,ID=6.8A
VGS=2.5V,ID=5.6A
VDS=15V,ID=6.2AV
IS=1.0A,VGS=0V
20
0.6
6
V
1.4 V
±100
1
nA
5 uA
A
11
23
mΩ
30 S
0.8 1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V
ID≡5.0A
VDS ==10V,VGS=0V
f=1MHz
VDD=10V,RL=10Ω
ID=1A,VGEN=4.5V
RG=6Ω
25 35
5.6 nC
9.6
1250
235 pF
195
20 30
18 28 nS
75 90
65 85
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4416 2009. V1
3Pages PACKAGE OUTLINE SOP-8P
STN4416
N Channel Enhancement Mode MOSFET
10A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4416 2009. V1
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ STN4416 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STN4412 | N Channel Enhancement Mode MOSFET | Stanson Technology |
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STN4416 | N Channel Enhancement Mode MOSFET | Stanson Technology |