(PDF) STN2018 Datasheet - N Channel Enhancement Mode MOSFET

Número de pieza	STN2018
Descripción	N Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! STN2018 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notbook computer power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE 20V/10A, RDS(ON) = 10mΩ @VGS = 4.5V 20V/7A, RDS(ON) = 15mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp . STN2018 2013. V1 1 page STN2018 N Channel Enhancement Mode MOSFET 10.0A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp . STN2018 2013. V1 5 Page

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PDF STN2018 Data sheet ( Hoja de datos )