(PDF) STN1810 Datasheet - N Channel Enhancement Mode MOSFET

Número de pieza	STN1810
Descripción	N Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! STN1810 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These applications such as notebook computer power management and other battery powered circuits where high-side switching, low in- line power loss and resistance to transients are melded. PIN CONFIGURATION SOP-8 FEATURE 60V/8.0A, RDS(ON) = 140mΩ (Typ.) @VGS = 10V 60V/6.5.0A, RDS(ON) = 150mΩ @VGS = 7.0V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 1 page TYPICAL CHARACTERICTICS STN1810 N Channel Enhancement Mode MOSFET 8.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 5 Page

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PDF STN1810 Data sheet ( Hoja de datos )